Method for Obtaining Unit Transmission in Nanodevice Electron Propagation: Full Transmission without Ballistic Propagation and Associated Field-effect Transistors
Description:
Overview of Technology
This technology purposes ballistic propagation with disordered materials.
Background
Ballistic propagation of electrons occurs when there is no disorder and allows for the minimum electrical resistance of wires as well as allowing devices such as field-effect transistors (FETs). The same effects can be obtained with disordered materials, leading to the same types of physical properties without ballistic electron propagation.
Description of Technology
The MSU technology quantum dragon nanodevices have total transmission of electrons for a wide range of electron energies, even though there is strong scattering so the electrons do not undergo ballistic propagation. Total electron transmission is achieved through optimizing and tuning lead connections to the nanodevice. This enables highly efficient field effect transistors, sensors, injectors for spin polarized currents, and wires with zero or minimal electrical resistance. The quantum dragon devices may be made of a variety of low-cost particles that are compatible with traditional transistor manufacturing techniques.
With correlated disorder, Anderson localization can be subdued. When Anderson localization is overcome, the nanomaterial becomes a perfect conductor in accordance with the Landauer formula. The nanomaterials/graphs wherein Anderson localization is overcome are whimsically called quantum dragon segments. Quantum dragon segments are shown to exist only on particular surfaces in the space of on-site energies and hopping parameters within the tight-binding model. Quantum dragon segments enable nanoelectronics for any case that ballistic electron propagation would allow such a device. This includes disordered materials/nanomaterials that are perfect conductors. The quantum dragon will have the same properties as ballistic propagation, leading to effects that include use as pinch off field effect transistors, ballistic FETs, and quantum interference effect transistors.
Benefits
- It has been shown that disordered systems can have the same electron transport properties as is the case for ballistic propagation in perfect crystals. This leads to transmission without electrical resistance at this level of modelling, as well as FETs and quantum sensing devices based on such effects.
- Quantum dragon segments allow for applications including quantum wires, field-effect transistors (FETs), and quantum sensors for electromagnetic fields and for physiosorbed or chemisorbed atoms or molecules. Another application would be construction of qubits. Whenever any nanodevice uses ballistic electron propagation for device functioning comparable nanodevices can be obtained using quantum dragon segments.
Opportunity
Work with experimentalists to give first measurements of quantum dragon segments, and devices made from them.